Справочник MOSFET. IPI80N08S2-07

 

IPI80N08S2-07 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPI80N08S2-07
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 1260 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0074 Ohm
   Тип корпуса: TO262
 

 Аналог (замена) для IPI80N08S2-07

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPI80N08S2-07 Datasheet (PDF)

 ..1. Size:164K  1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdfpdf_icon

IPI80N08S2-07

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 ..2. Size:160K  infineon
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdfpdf_icon

IPI80N08S2-07

IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 5.1. Size:228K  infineon
ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdfpdf_icon

IPI80N08S2-07

IPB80N08S4-06IPI80N08S4-06, IPP80N08S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 5.5mWDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp

 7.1. Size:158K  infineon
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdfpdf_icon

IPI80N08S2-07

IPB80N06S2L-05IPI80N06S2L-05, IPP80N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.5mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l

Другие MOSFET... IPI80N06S2-07 , IPI80N06S2-08 , IPI80N06S2L-05 , IPI80N06S2L-11 , IPI80N06S4-05 , IPI80N06S4-07 , IPI80N06S4L-05 , IPI80N06S4L-07 , 20N60 , IPI80P03P4L-04 , IPI80P03P4L-07 , IPI90N04S4-02 , IPI90N06S4-04 , IPI90N06S4L-04 , IPI023NE7N3G , IPI024N06N3G , IPI028N08N3G .

History: HCA90R300 | NTF5P03T3G | TPS1101Y | MSC22N03 | AOD407 | IPP90N04S4-02 | IPL60R210P6

 

 
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