IPI80N08S2-07. Аналоги и основные параметры

Наименование производителя: IPI80N08S2-07

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 75 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

Cossⓘ - Выходная емкость: 1260 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0074 Ohm

Тип корпуса: TO262

Аналог (замена) для IPI80N08S2-07

- подборⓘ MOSFET транзистора по параметрам

 

IPI80N08S2-07 даташит

 ..1. Size:164K  1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdfpdf_icon

IPI80N08S2-07

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 ..2. Size:160K  infineon
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdfpdf_icon

IPI80N08S2-07

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 5.1. Size:228K  infineon
ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdfpdf_icon

IPI80N08S2-07

IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 5.5 mW DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ

 7.1. Size:158K  infineon
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdfpdf_icon

IPI80N08S2-07

IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l

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