IPI028N08N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPP028N08N3 G IPI028N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 2.8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP02CN08N Pb-free lead plating; RoHS compliant Qualified ac

## ! ! # ! ! #:A0

## ! ! # ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35

TypeIPI020N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 2.0 mW Superior thermal resistanceID 120 A N-channelQOSS nC 119 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 106 Pb-free lead plating; RoHS compliant

pe IPB021N06N3 G IPI024N06N3 GIPP024N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 1 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI 1 DQ H35

Type IPB021N06N3 G IPI024N06N3 GIPP024N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 2.1mDS(on),max (SMD) Optimized technology for DC/DC convertersI 120 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanch

TypeIPI029N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 2.9 mW Superior thermal resistanceID 100 A N-channelQOSS nC 65 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 56 Pb-free lead plating; RoHS compliant Ha

## ! ! # ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35