Справочник MOSFET. IPI028N08N3G

 

IPI028N08N3G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPI028N08N3G
   Маркировка: 028N08N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 155 nC
   trⓘ - Время нарастания: 73 ns
   Cossⓘ - Выходная емкость: 2890 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IPI028N08N3G

 

 

IPI028N08N3G Datasheet (PDF)

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 ipp028n08n3g ipi028n08n3g.pdf

IPI028N08N3G IPI028N08N3G

IPP028N08N3 G IPI028N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 2.8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP02CN08N Pb-free lead plating; RoHS compliant Qualified ac

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 ipp028n08n3 ipp028n08n3g ipi028n08n3g.pdf

IPI028N08N3G IPI028N08N3G

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 ipp023ne7n3g ipi023ne7n3g.pdf

IPI028N08N3G IPI028N08N3G

## ! ! # ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35

 9.2. Size:580K  infineon
 ipi020n06n.pdf

IPI028N08N3G IPI028N08N3G

TypeIPI020N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 2.0 mW Superior thermal resistanceID 120 A N-channelQOSS nC 119 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 106 Pb-free lead plating; RoHS compliant

 9.3. Size:999K  infineon
 ipp024n06n3g ipb021n06n3g ipi024n06n3g.pdf

IPI028N08N3G IPI028N08N3G

pe IPB021N06N3 G IPI024N06N3 GIPP024N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 1 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI 1 DQ H35

 9.4. Size:483K  infineon
 ipb021n06n3g ipi024n06n3g ipp024n06n3g.pdf

IPI028N08N3G IPI028N08N3G

Type IPB021N06N3 G IPI024N06N3 GIPP024N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 2.1mDS(on),max (SMD) Optimized technology for DC/DC convertersI 120 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanch

 9.5. Size:594K  infineon
 ipi029n06n.pdf

IPI028N08N3G IPI028N08N3G

TypeIPI029N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 2.9 mW Superior thermal resistanceID 100 A N-channelQOSS nC 65 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 56 Pb-free lead plating; RoHS compliant Ha

 9.6. Size:846K  infineon
 ipp023ne7n3 ipi023ne7n31.pdf

IPI028N08N3G IPI028N08N3G

## ! ! # ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35

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