IPI030N10N3G Todos los transistores

 ..1. Size:536K  infineon
 ipi030n10n3g ipp030n10n3g ipp030n10n3g ipi030n10n3g.pdf

IPP030N10N3 G IPI030N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 3 mW Excellent gate charge x R product (FOM) DS(on) ID 100 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for h

 3.1. Size:260K  inchange semiconductor
 ipi030n10n3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI030N10N3 FEATURES Static drain-source on-resistance RDS(on) 3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T

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 ipi034ne7n3g ipp034ne7n3g.pdf

IPP034NE7N3 G IPI034NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 75 V DS Optimized technology for synchronous rectification R 3.4 m DS(on),max Ideal for high frequency switching and DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

 9.2. Size:475K  infineon
 ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf

Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Product Summary OptiMOS 3 Power-Transistor V 60 V DS Features R 3.4 m DS(on),max (SMD) Ideal for high frequency switching and sync. rec. I 90 A D Optimized technology for DC/DC converters previous engineering Excellent gate charge x R product (FOM) DS(on) sample codes Very low on-resistance RDS(on) IPP04xN06

 9.3. Size:1018K  infineon
 ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I 1 D Q H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 + D n) #) ' ' ! Q ' 381>>5?B=1

 9.4. Size:483K  infineon
 ipb029n06n3g ipi032n06n3g ipp032n06n3g.pdf

Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary V 60 V Features DS R 2.9 m Ideal for high frequency switching and sync. rec. DS(on),max (SMD) I 120 A Optimized technology for DC/DC converters D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche t

 9.5. Size:837K  infineon
 ipp034ne7n3g ipi034ne7n3g.pdf

## ! ! # ! ! TM # A0 4 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC 1 D Q H35

 9.6. Size:494K  infineon
 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 3.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

 9.7. Size:261K  inchange semiconductor
 ipi037n08n3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI037N08N3 FEATURES Static drain-source on-resistance RDS(on) 3.75m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS