All MOSFET. IPI030N10N3G Datasheet

 

IPI030N10N3G Datasheet and Replacement


   Type Designator: IPI030N10N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 1940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO262
 

 IPI030N10N3G substitution

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IPI030N10N3G Datasheet (PDF)

 ..1. Size:536K  infineon
ipi030n10n3g ipp030n10n3g ipp030n10n3g ipi030n10n3g.pdf pdf_icon

IPI030N10N3G

IPP030N10N3 G IPI030N10N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 100 V N-channel, normal levelRDS(on),max 3mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for h

 3.1. Size:260K  inchange semiconductor
ipi030n10n3.pdf pdf_icon

IPI030N10N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI030N10N3FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:460K  1
ipi034ne7n3g ipp034ne7n3g.pdf pdf_icon

IPI030N10N3G

IPP034NE7N3 GIPI034NE7N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 75 VDS Optimized technology for synchronous rectificationR 3.4mDS(on),max Ideal for high frequency switching and DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

 9.2. Size:475K  infineon
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf pdf_icon

IPI030N10N3G

Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06

Datasheet: IPI80P03P4L-04 , IPI80P03P4L-07 , IPI90N04S4-02 , IPI90N06S4-04 , IPI90N06S4L-04 , IPI023NE7N3G , IPI024N06N3G , IPI028N08N3G , IRF640N , IPI032N06N3G , IPI034NE7N3G , IPI037N06L3G , IPI037N08N3G , IPI040N06N3G , IPI041N12N3G , IPI045N10N3G , IPI04CN10NG .

History: HFP630 | SSI4N80A

Keywords - IPI030N10N3G MOSFET datasheet

 IPI030N10N3G cross reference
 IPI030N10N3G equivalent finder
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