IPI110N20N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPI110N20N3G
   Código: 110N20N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 88 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 65 nC
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 401 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TO262

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IPI110N20N3G Datasheet (PDF)

..1. Size:690K infineon
ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf

IPB107N20N3 G IPP110N20N3 GIPI110N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl

3.1. Size:289K inchange semiconductor
ipi110n20n3.pdf

isc N-Channel MOSFET Transistor IPI110N20N3FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

9.1. Size:757K infineon
ipb108n15n3g ipp111n15n3g ipi111n15n3g.pdf

IPB108N15N3 G IPP111N15N3 GIPI111N15N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max (TO263) 10.8 mW Excellent gate charge x R product (FOM)DS(on)ID 83 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JEDE

9.2. Size:438K infineon
ipb108n15n3-g ipp111n15n3-g ipi111n15n3-g.pdf

IPB108N15N3 G IPP111N15N3 GIPI111N15N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 10.8mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 83 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JE

9.3. Size:286K inchange semiconductor
ipi111n15n3.pdf

isc N-Channel MOSFET Transistor IPI111N15N3FEATURESStatic drain-source on-resistance:RDS(on) 11.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSY

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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