IPI110N20N3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI110N20N3G
Marking Code: 110N20N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 88
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 65
nC
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 401
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011
Ohm
Package:
TO262
IPI110N20N3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI110N20N3G
Datasheet (PDF)
..1. Size:690K infineon
ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf 
IPB107N20N3 G IPP110N20N3 GIPI110N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl
3.1. Size:289K inchange semiconductor
ipi110n20n3.pdf
isc N-Channel MOSFET Transistor IPI110N20N3FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
9.1. Size:757K infineon
ipb108n15n3g ipp111n15n3g ipi111n15n3g.pdf
IPB108N15N3 G IPP111N15N3 GIPI111N15N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max (TO263) 10.8 mW Excellent gate charge x R product (FOM)DS(on)ID 83 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JEDE
9.2. Size:438K infineon
ipb108n15n3-g ipp111n15n3-g ipi111n15n3-g.pdf
IPB108N15N3 G IPP111N15N3 GIPI111N15N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 10.8mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 83 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JE
9.3. Size:286K inchange semiconductor
ipi111n15n3.pdf
isc N-Channel MOSFET Transistor IPI111N15N3FEATURESStatic drain-source on-resistance:RDS(on) 11.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSY
Datasheet: WPB4002
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