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IPI35CN10NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI35CN10NG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 58 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 175 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO262
 

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IPI35CN10NG Datasheet (PDF)

 ..1. Size:854K  infineon
 ipb34cn10ng ipd33cn10ng ipi35cn10ng ipp35cn10ng ipb34cn10n ipd33cn10n ipi35cn10n ipp35cn10n.pdf pdf_icon

IPI35CN10NG

IPB34CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 33 mW Excellent gate charge x R product (FOM)DS(on)ID 27 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) f

 4.1. Size:704K  infineon
 ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf pdf_icon

IPI35CN10NG

IPB35CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N G IPU33CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 34mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 27 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

 4.2. Size:261K  inchange semiconductor
 ipi35cn10n.pdf pdf_icon

IPI35CN10NG

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI35CN10NFEATURESStatic drain-source on-resistance:RDS(on) 0.035Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(

Otros transistores... IPI126N10N3G , IPI139N08N3G , IPI147N12N3G , IPI180N10N3G , IPI200N15N3G , IPI200N25N3G , IPI26CN10NG , IPI320N20N3G , 4N60 , IPI50CN10NG , IPI50R140CP , IPI50R199CP , IPI50R250CP , IPI50R299CP , IPI50R350CP , IPI50R380CE , IPI50R399CP .

History: FMC12N60ES | NTD24N06-001 | STT3402N | IRFHM8228 | 2SK1494 | SFW1800N650C2

 

 
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