IPI35CN10NG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI35CN10NG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 58 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 175 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: TO262

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IPI35CN10NG datasheet

 ..1. Size:854K  infineon
 ipb34cn10ng ipd33cn10ng ipi35cn10ng ipp35cn10ng ipb34cn10n ipd33cn10n ipi35cn10n ipp35cn10n.pdf pdf_icon

IPI35CN10NG

IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 33 mW Excellent gate charge x R product (FOM) DS(on) ID 27 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) f

 4.1. Size:704K  infineon
 ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf pdf_icon

IPI35CN10NG

IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 34 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 27 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

 4.2. Size:261K  inchange semiconductor
 ipi35cn10n.pdf pdf_icon

IPI35CN10NG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI35CN10N FEATURES Static drain-source on-resistance RDS(on) 0.035 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(

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