APT8030LVR Todos los transistores

 

APT8030LVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8030LVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 520 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 27 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 340 nC

Tiempo de elevación (tr): 14 nS

Conductancia de drenaje-sustrato (Cd): 645 pF

Resistencia drenaje-fuente RDS(on): 0.3 Ohm

Empaquetado / Estuche: TO264

Búsqueda de reemplazo de MOSFET APT8030LVR

 

APT8030LVR Datasheet (PDF)

1.1. apt8030lvr.pdf Size:60K _apt

APT8030LVR
APT8030LVR

APT8030LVR 800V 27A 0.300Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

1.2. apt8030lvfr.pdf Size:62K _apt

APT8030LVR
APT8030LVR

APT8030LVFR 800V 27A 0.300Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tes

 3.1. apt8030b2vr.pdf Size:58K _apt

APT8030LVR
APT8030LVR

APT8030B2VR 800V 27A 0.300Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Low

3.2. apt8030jn.pdf Size:61K _apt

APT8030LVR
APT8030LVR

D G APT8030JN 800V 27.0A 0.30Ω S APT8035JN 800V 25.0A 0.35Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 8030JN 8035JN UNIT VDSS Drain-Source Voltage 800 800 Volts ID Continuous Drain Cu

 3.3. apt8030b2vfr.pdf Size:60K _apt

APT8030LVR
APT8030LVR

APT8030B2VFR 800V 27A 0.300Ω POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche

3.4. apt8030jvr.pdf Size:67K _apt

APT8030LVR
APT8030LVR

APT8030JVR 800V 25A 0.300Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche T

 3.5. apt8030.pdf Size:60K _apt

APT8030LVR
APT8030LVR

APT8030B2VFR 800V 27A 0.300Ω POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche

3.6. apt8030jvfr.pdf Size:70K _apt

APT8030LVR
APT8030LVR

APT8030JVFR 800V 25A 0.300Ω FREDFET POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode

Otros transistores... APT8028JVR , APT802R4KN , APT8030B2VFR , APT8030B2VR , APT8030JN , APT8030JVFR , APT8030JVR , APT8030LVFR , BS170 , APT8056BVFR , APT8056BVR , APT8058HVR , APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR .

 

 
Back to Top

 


APT8030LVR
  APT8030LVR
  APT8030LVR
  APT8030LVR
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top