APT8030LVR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT8030LVR
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 520 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 27 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 340 nC
trⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 645 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO264
Аналог (замена) для APT8030LVR
APT8030LVR Datasheet (PDF)
apt8030lvr.pdf
APT8030LVR800V 27A 0.300POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt8030lvfr.pdf
APT8030LVFR800V 27A 0.300POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
apt8030jn.pdf
DGAPT8030JN 800V 27.0A 0.30SAPT8035JN 800V 25.0A 0.35ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 8030JN 8035JN UNITVDSS Drain-Source Voltage800 800 VoltsID Continuous Drain Cu
apt8030b2vr.pdf
APT8030B2VR800V 27A 0.300POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low
apt8030b2vfr.pdf
APT8030B2VFR800V 27A 0.300POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche
apt8030jvfr.pdf
APT8030JVFR800V 25A 0.300FREDFETPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode
apt8030.pdf
APT8030B2VFR800V 27A 0.300POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche
apt8030jvr.pdf
APT8030JVR800V 25A 0.300POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T
Другие MOSFET... APT8028JVR , APT802R4KN , APT8030B2VFR , APT8030B2VR , APT8030JN , APT8030JVFR , APT8030JVR , APT8030LVFR , IRF840 , APT8056BVFR , APT8056BVR , APT8058HVR , APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR .
Список транзисторов
Обновления
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