IPI60R099CPA Todos los transistores

 

IPI60R099CPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI60R099CPA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 255 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: TO262
     - Selección de transistores por parámetros

 

IPI60R099CPA Datasheet (PDF)

 ..1. Size:325K  infineon
ipi60r099cpa.pdf pdf_icon

IPI60R099CPA

IPI60R099CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.105DS(on),maxQ 60 nCg,typFeatures Worldwide best Rds,on in TO262 Ultra low gate chargePG-TO262-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for A

 3.1. Size:620K  infineon
ipi60r099cp.pdf pdf_icon

IPI60R099CPA

IPI60R099CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Worldwide best R in TO220ds,onR 0.099DS(on),max Ultra low gate chargeQ 60 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO262-3-1 Pb-free lead plating; RoHS compliantCoolMOS CP is specially

 3.2. Size:285K  infineon
ipi60r099cp rev20 a.pdf pdf_icon

IPI60R099CPA

IPI60R099CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Worldwide best R in TO220ds,onR 0.099DS(on),max Ultra low gate chargeQ 60 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO262-3-1 Pb-free lead plating; RoHS compliantCoolMOS CP is specially

 3.3. Size:287K  inchange semiconductor
ipi60r099cp.pdf pdf_icon

IPI60R099CPA

isc N-Channel MOSFET Transistor IPI60R099CPFEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

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