IPI60R099CPA Todos los transistores

 

IPI60R099CPA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI60R099CPA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 255 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: TO262
 

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IPI60R099CPA datasheet

 ..1. Size:325K  infineon
 ipi60r099cpa.pdf pdf_icon

IPI60R099CPA

IPI60R099CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.105 DS(on),max Q 60 nC g,typ Features Worldwide best Rds,on in TO262 Ultra low gate charge PG-TO262-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for A

 3.1. Size:620K  infineon
 ipi60r099cp.pdf pdf_icon

IPI60R099CPA

IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Worldwide best R in TO220 ds,on R 0.099 DS(on),max Ultra low gate charge Q 60 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO262-3-1 Pb-free lead plating; RoHS compliant CoolMOS CP is specially

 3.2. Size:285K  infineon
 ipi60r099cp rev20 a.pdf pdf_icon

IPI60R099CPA

IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Worldwide best R in TO220 ds,on R 0.099 DS(on),max Ultra low gate charge Q 60 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO262-3-1 Pb-free lead plating; RoHS compliant CoolMOS CP is specially

 3.3. Size:287K  inchange semiconductor
 ipi60r099cp.pdf pdf_icon

IPI60R099CPA

isc N-Channel MOSFET Transistor IPI60R099CP FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

MOSTRAR MÁS

Otros transistores... IPI50R250CP , IPI50R299CP , IPI50R350CP , IPI50R380CE , IPI50R399CP , IPI530N15N3G , IPI600N25N3G , IPI60R099CP , AO4407 , IPI60R125CP , IPI60R165CP , IPI60R190C6 , IPI60R199CP , IPI60R250CP , IPI60R280C6 , IPI60R299CP , IPI60R380C6 .

History: KI5406DC | HP80N80

 

 
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