Справочник MOSFET. IPI60R099CPA

 

IPI60R099CPA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPI60R099CPA
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 255 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.105 Ohm
   Тип корпуса: TO262
 

 Аналог (замена) для IPI60R099CPA

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPI60R099CPA Datasheet (PDF)

 ..1. Size:325K  infineon
 ipi60r099cpa.pdf pdf_icon

IPI60R099CPA

IPI60R099CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.105DS(on),maxQ 60 nCg,typFeatures Worldwide best Rds,on in TO262 Ultra low gate chargePG-TO262-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for A

 3.1. Size:620K  infineon
 ipi60r099cp.pdf pdf_icon

IPI60R099CPA

IPI60R099CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Worldwide best R in TO220ds,onR 0.099DS(on),max Ultra low gate chargeQ 60 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO262-3-1 Pb-free lead plating; RoHS compliantCoolMOS CP is specially

 3.2. Size:285K  infineon
 ipi60r099cp rev20 a.pdf pdf_icon

IPI60R099CPA

IPI60R099CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Worldwide best R in TO220ds,onR 0.099DS(on),max Ultra low gate chargeQ 60 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO262-3-1 Pb-free lead plating; RoHS compliantCoolMOS CP is specially

 3.3. Size:287K  inchange semiconductor
 ipi60r099cp.pdf pdf_icon

IPI60R099CPA

isc N-Channel MOSFET Transistor IPI60R099CPFEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

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