IPI60R125CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI60R125CP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Paquete / Cubierta: TO262
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IPI60R125CP Datasheet (PDF)
ipi60r125cp.pdf

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Otros transistores... IPI50R299CP , IPI50R350CP , IPI50R380CE , IPI50R399CP , IPI530N15N3G , IPI600N25N3G , IPI60R099CP , IPI60R099CPA , 18N50 , IPI60R165CP , IPI60R190C6 , IPI60R199CP , IPI60R250CP , IPI60R280C6 , IPI60R299CP , IPI60R380C6 , IPI60R385CP .
History: CHM7101JGP | KF7N50D | HSBA6074 | IXFN340N06 | HSBA3014 | AS4375 | UJN1205K
History: CHM7101JGP | KF7N50D | HSBA6074 | IXFN340N06 | HSBA3014 | AS4375 | UJN1205K



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