IPI60R125CP
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI60R125CP
Marking Code: 6R125P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 208
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 53
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125
Ohm
Package:
TO262
IPI60R125CP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI60R125CP
Datasheet (PDF)
..1. Size:547K infineon
ipi60r125cp.pdf 
IPI60R125CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO220PGTO2
..2. Size:286K inchange semiconductor
ipi60r125cp.pdf
isc N-Channel MOSFET Transistor IPI60R125CPFEATURESStatic drain-source on-resistance:RDS(on) 0.125Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
7.1. Size:547K infineon
ipi60r165cp.pdf
IPI60R165CPCIMOS #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262 ::7!"%
7.2. Size:1495K infineon
ipi60r190c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according
7.3. Size:550K infineon
ipi60r199cpa.pdf
IPI60R199CPCIMOS #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262 ::7!"% #
7.4. Size:544K infineon
ipi60r199cp.pdf
003 6 7112 45 678 9 1 88 81 8 F OO GH_>D r M(0 ] [ `UR ,L!#% ' & -$" &'" #)*+,$ ( !s>D A , [@ q^qti:L(0./0/ $ ! 10$! 0 2 &&u$!8 b :v ?L
7.5. Size:1214K infineon
ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to
7.6. Size:286K inchange semiconductor
ipi60r165cp.pdf
isc N-Channel MOSFET Transistor IPI60R165CPFEATURESStatic drain-source on-resistance:RDS(on) 0.165Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Ultra low gate charge High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
7.7. Size:264K inchange semiconductor
ipi60r190c6.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPI60R190C6FEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
7.8. Size:286K inchange semiconductor
ipi60r199cp.pdf
isc N-Channel MOSFET Transistor IPI60R199CPFEATURESStatic drain-source on-resistance:RDS(on) 0.199Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
Datasheet: IPI50R299CP
, IPI50R350CP
, IPI50R380CE
, IPI50R399CP
, IPI530N15N3G
, IPI600N25N3G
, IPI60R099CP
, IPI60R099CPA
, 4435
, IPI60R165CP
, IPI60R190C6
, IPI60R199CP
, IPI60R250CP
, IPI60R280C6
, IPI60R299CP
, IPI60R380C6
, IPI60R385CP
.
