IPI60R299CP Todos los transistores

 

IPI60R299CP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI60R299CP
   Código: 6R299P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 96 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 11 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Carga de la puerta (Qg): 22 nC
   Tiempo de subida (tr): 5 nS
   Conductancia de drenaje-sustrato (Cd): 60 pF
   Resistencia entre drenaje y fuente RDS(on): 0.299 Ohm
   Paquete / Cubierta: TO262

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IPI60R299CP Datasheet (PDF)

 ..1. Size:556K  infineon
ipi60r299cp.pdf

IPI60R299CP
IPI60R299CP

IPI60R299CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262 ::7!"%

 ..2. Size:287K  inchange semiconductor
ipi60r299cp.pdf

IPI60R299CP
IPI60R299CP

isc N-Channel MOSFET Transistor IPI60R299CPFEATURESStatic drain-source on-resistance:RDS(on) 0.299Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 7.1. Size:1432K  infineon
ipi60r280c6.pdf

IPI60R299CP
IPI60R299CP

MOSFET+ =L9D - PA

 7.2. Size:556K  infineon
ipi60r250cp.pdf

IPI60R299CP
IPI60R299CP

IPI60R250CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ::

 7.3. Size:1587K  infineon
ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf

IPI60R299CP
IPI60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R280C6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R280C6, IPB60R280C6IPI60R280C6, IPP60R280C6IPW60R280C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 7.4. Size:286K  inchange semiconductor
ipi60r280c6.pdf

IPI60R299CP
IPI60R299CP

isc N-Channel MOSFET Transistor IPI60R280C6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of useABSOLUTE MA

 7.5. Size:287K  inchange semiconductor
ipi60r250cp.pdf

IPI60R299CP
IPI60R299CP

isc N-Channel MOSFET Transistor IPI60R250CPFEATURESStatic drain-source on-resistance:RDS(on) 0.25Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

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