APT8058HVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT8058HVR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 250 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 13.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de la puerta (Qg): 185 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 370 pF
Resistencia entre drenaje y fuente RDS(on): 0.58 Ohm
Paquete / Cubierta: TO258
Búsqueda de reemplazo de MOSFET APT8058HVR
APT8058HVR Datasheet (PDF)
apt8058hvr.pdf
APT8058HVR800V 13.5A 0.580POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe
apt8052bllg.pdf
APT8052BLLAPT8052SLL800V 15A 0.520RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)SLLand Qg. Power MOS 7 combines lower conduction and switching lossesalong
apt8052bll.pdf
APT8052BLLAPT8052SLL800V 15A 0.520WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching
apt8056bvfr.pdf
APT8056BVFR800V 16A 0.560POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
apt8056bvr.pdf
APT8056BVR800V 16A 0.560POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt8052bfllg apt8052sfllg.pdf
APT8052BFLLAPT8052SFLL800V 15A 0.520R POWER MOS 7 FREDFETBFLLD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL
apt8052bfll.pdf
APT8052BFLLAPT8052SFLL800V 15A 0.520WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas
apt8052bll.pdf
isc N-Channel MOSFET Transistor APT8052BLLFEATURESDrain Current I =15A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.52(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt8056bvr.pdf
isc N-Channel MOSFET Transistor APT8056BVRFEATURESDrain Current I =16A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt8052bfll.pdf
isc N-Channel MOSFET Transistor APT8052BFLLFEATURESDrain Current I =15A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.52(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Otros transistores... APT8030B2VR , APT8030JN , APT8030JVFR , APT8030JVR , APT8030LVFR , APT8030LVR , APT8056BVFR , APT8056BVR , IRF840 , APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , APT8075BN , APT8075BVR , BF1100 .
