APT8058HVR Todos los transistores

 

APT8058HVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT8058HVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 13.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 370 pF

Resistencia drenaje-fuente RDS(on): 0.58 Ohm

Empaquetado / Estuche: TO258

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APT8058HVR Datasheet (PDF)

1.1. apt8058hvr.pdf Size:60K _apt

APT8058HVR
APT8058HVR

APT8058HVR 800V 13.5A 0.580Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

4.1. apt8052bllg.pdf Size:156K _update-mosfet

APT8058HVR
APT8058HVR

APT8052BLL APT8052SLL Ω 800V 15A 0.520Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) SLL and Qg. Power MOS 7® combines lower conduction and switching losses along

4.2. apt8052bfllg apt8052sfllg.pdf Size:157K _update-mosfet

APT8058HVR
APT8058HVR

APT8052BFLL APT8052SFLL Ω 800V 15A 0.520Ω Ω Ω Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SFLL

 4.3. apt8056bvfr.pdf Size:63K _apt

APT8058HVR
APT8058HVR

APT8056BVFR 800V 16A 0.560Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

4.4. apt8052bfll.pdf Size:71K _apt

APT8058HVR
APT8058HVR

APT8052BFLL APT8052SFLL 800V 15A 0.520W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

 4.5. apt8056bvr.pdf Size:61K _apt

APT8058HVR
APT8058HVR

APT8056BVR 800V 16A 0.560Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

4.6. apt8052bll.pdf Size:69K _apt

APT8058HVR
APT8058HVR

APT8052BLL APT8052SLL 800V 15A 0.520W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching

Otros transistores... APT8030B2VR , APT8030JN , APT8030JVFR , APT8030JVR , APT8030LVFR , APT8030LVR , APT8056BVFR , APT8056BVR , IRF540N , APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , APT8075BN , APT8075BVR , BF1100 .

 
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