APT8058HVR. Аналоги и основные параметры
Наименование производителя: APT8058HVR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 370 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.58 Ohm
Тип корпуса: TO258
Аналог (замена) для APT8058HVR
- подборⓘ MOSFET транзистора по параметрам
APT8058HVR даташит
apt8058hvr.pdf
APT8058HVR 800V 13.5A 0.580 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe
apt8052bllg.pdf
APT8052BLL APT8052SLL 800V 15A 0.520 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) SLL and Qg. Power MOS 7 combines lower conduction and switching losses along
apt8052bll.pdf
APT8052BLL APT8052SLL 800V 15A 0.520W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching
apt8056bvfr.pdf
APT8056BVFR 800V 16A 0.560 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
Другие IGBT... APT8030B2VR, APT8030JN, APT8030JVFR, APT8030JVR, APT8030LVFR, APT8030LVR, APT8056BVFR, APT8056BVR, IRFP460, APT8065AVR, APT8065BVFR, APT8065BVR, APT8065SVR, APT8067HVR, APT8075BN, APT8075BVR, BF1100
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Список транзисторов
Обновления
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