IPP80N06S2-07 Todos los transistores

 

IPP80N06S2-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP80N06S2-07
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 880 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0066 Ohm
   Paquete / Cubierta: TO220
 

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IPP80N06S2-07 Datasheet (PDF)

 ..1. Size:158K  infineon
 ipb80n06s2-07 ipp80n06s2-07 ipi80n06s2-07 ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07.pdf pdf_icon

IPP80N06S2-07

IPB80N06S2-07IPP80N06S2-07, IPI80N06S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 6.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 2.1. Size:155K  infineon
 ipp80n06s2-05 ipb80n06s2-05.pdf pdf_icon

IPP80N06S2-07

IPB80N06S2-05IPP80N06S2-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 4.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType

 2.2. Size:158K  infineon
 ipb80n06s2-08 ipp80n06s2-08 ipi80n06s2-08 ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf pdf_icon

IPP80N06S2-07

IPB80N06S2-08IPP80N06S2-08, IPI80N06S2-08OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 2.3. Size:155K  infineon
 ipb80n06s2-09 ipp80n06s2-09 ipp80n06s2-09 ipb80n06s2-09.pdf pdf_icon

IPP80N06S2-07

IPB80N06S2-09IPP80N06S2-09OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 8.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType

MOSTRAR MÁS

Otros transistores... IPP80N04S2L-03 , IPP80N04S3-03 , IPP80N04S3-04 , IPP80N04S3-06 , IPP80N04S3-H4 , IPP80N04S4-04 , IPP80N04S4L-04 , IPP80N06S2-05 , 7N65 , IPP80N06S2-08 , IPP80N06S2-09 , IPP80N06S2-H5 , IPP80N06S2L-05 , IPP80N06S2L-06 , IPP80N06S2L-07 , IPP80N06S2L-09 , IPP80N06S2L-11 .

History: HFB1N65S | IMZ120R090M1H | ZVN4424ZTA | 2SJ419 | FDPF5N60NZ | PV551BA | IRFP452FI

 

 
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