IPP80N08S2L-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP80N08S2L-07
Código: 2N08L07
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 183 nC
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 1300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0071 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET IPP80N08S2L-07
IPP80N08S2L-07 Datasheet (PDF)
ipb80n08s2l-07 ipp80n08s2l-07.pdf
IPB80N08S2L-07IPP80N08S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf
IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf
IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdf
IPB80N08S4-06IPI80N08S4-06, IPP80N08S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 5.5mWDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918