IPP80N08S2L-07 Specs and Replacement

Type Designator: IPP80N08S2L-07

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm

Package: TO220

IPP80N08S2L-07 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPP80N08S2L-07 datasheet

 ..1. Size:157K  infineon
 ipb80n08s2l-07 ipp80n08s2l-07.pdf pdf_icon

IPP80N08S2L-07

IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.8 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch... See More ⇒

 4.1. Size:164K  1
 ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPP80N08S2L-07

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

 4.2. Size:160K  infineon
 ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPP80N08S2L-07

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

 5.1. Size:228K  infineon
 ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdf pdf_icon

IPP80N08S2L-07

IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 5.5 mW DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ... See More ⇒

SHOW MORE

Detailed specifications: IPP80N06S2L-09, IPP80N06S2L-11, IPP80N06S2L-H5, IPP80N06S4-05, IPP80N06S4-07, IPP80N06S4L-05, IPP80N06S4L-07, IPP80N08S2-07, IRF4905, IPP80P03P4L-04, IPP80P03P4L-07, IPP90N04S4-02, IPP90N06S4-04, IPP90N06S4L-04, IPP015N04NG, IPP023N04NG, IPP023NE7N3G

Keywords - IPP80N08S2L-07 MOSFET specs

 IPP80N08S2L-07 cross reference

 IPP80N08S2L-07 equivalent finder

 IPP80N08S2L-07 pdf lookup

 IPP80N08S2L-07 substitution

 IPP80N08S2L-07 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility