IPP90N06S4L-04 Todos los transistores

 

IPP90N06S4L-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP90N06S4L-04

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 90 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 170 nC

Resistencia drenaje-fuente RDS(on): 0.0034 Ohm

Empaquetado / Estuche: PGTO220

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IPP90N06S4L-04 Datasheet (PDF)

1.1. ipp90n06s4l ipb90n06s4l ipi90n06s4l-04 ds 10.pdf Size:169K _infineon

IPP90N06S4L-04
IPP90N06S4L-04

IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 OptiMOS-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 3.4 m? DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marki

5.1. ipp90r800c3 1[1].0.pdf Size:286K _infineon

IPP90N06S4L-04
IPP90N06S4L-04

IPP90R800C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 0.8 ? DS(on),max J Extreme dv/dt rated Q 42 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Ultra low gate charge CoolMOS 900V is designed for:

5.2. ipp90r500c3 1[1].0.pdf Size:292K _infineon

IPP90N06S4L-04
IPP90N06S4L-04

IPP90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 0.5 ? DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for:

 5.3. ipp90r340c3 1[1].0.pdf Size:286K _infineon

IPP90N06S4L-04
IPP90N06S4L-04

IPP90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25C 0.34 ? DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Worldwide best R in TO220 DS,on Ultra low gate charge

5.4. ipp90r1k0c3 1[1].0.pdf Size:287K _infineon

IPP90N06S4L-04
IPP90N06S4L-04

IPP90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 1.0 ? DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for:

 5.5. ipp90r1k2c3 1[1].0.pdf Size:293K _infineon

IPP90N06S4L-04
IPP90N06S4L-04

IPP90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25C 1.2 ? DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for: Qu

Otros transistores... IPP80N06S4L-05 , IPP80N06S4L-07 , IPP80N08S2-07 , IPP80N08S2L-07 , IPP80P03P4L-04 , IPP80P03P4L-07 , IPP90N04S4-02 , IPP90N06S4-04 , IRFP4332 , IPP015N04NG , IPP023N04NG , IPP023NE7N3G , IPP024N06N3G , IPP028N08N3G , IPP030N10N3G , IPP032N06N3G , IPP034N03LG .

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Recientemente añadidas las descripciónes de los transistores:

MOSFET: QS8M51 | QS8M13 | QS8M11 | QS8K21 | QS8K2 | QS8K13 | QS8K11 | QS8J5 | QS8J4 | QS8J2 | QS8J13 | QS8J12 | QS8J11 | QS8F2 | QS6U24 |

 

 

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