APT8075BN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT8075BN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 310 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 88 nC
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 370 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Paquete / Cubierta: TO247
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APT8075BN Datasheet (PDF)
apt8075bn.pdf
DTO-247GAPT8075BN 800V 13.0A 0.75SAPT8090BN 800V 12.0A 0.90POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 8075BN 8090BN UNITVDSS Drain-Source Voltage800 800 VoltsID Continuous Drain Current @ TC = 25C13 12AmpsIDM Pulsed Drain Current 156 48V
apt8075bvfrg.pdf
APT8075BVFR800V 12A 0.750POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
apt8075bvr.pdf
APT8075BVR800V 12A 0.750POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt8075bvfr.pdf
APT8075BVFR800V 12A 0.750POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
apt8075bvr.pdf
isc N-Channel MOSFET Transistor APT8075BVRFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Otros transistores... APT8056BVFR , APT8056BVR , APT8058HVR , APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , IRF640N , APT8075BVR , BF1100 , BF1100R , BF1100WR , BF1101 , BF1101R , BF1101WR , BF1102 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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