Справочник MOSFET. APT8075BN

 

APT8075BN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT8075BN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 310 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 370 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
   Тип корпуса: TO247

 Аналог (замена) для APT8075BN

 

 

APT8075BN Datasheet (PDF)

 ..1. Size:50K  apt
 apt8075bn.pdf

APT8075BN APT8075BN

DTO-247GAPT8075BN 800V 13.0A 0.75SAPT8090BN 800V 12.0A 0.90POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 8075BN 8090BN UNITVDSS Drain-Source Voltage800 800 VoltsID Continuous Drain Current @ TC = 25C13 12AmpsIDM Pulsed Drain Current 156 48V

 6.1. Size:52K  apt
 apt8075bvfrg.pdf

APT8075BN APT8075BN

APT8075BVFR800V 12A 0.750POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 6.2. Size:62K  apt
 apt8075bvr.pdf

APT8075BN APT8075BN

APT8075BVR800V 12A 0.750POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 6.3. Size:72K  apt
 apt8075bvfr.pdf

APT8075BN APT8075BN

APT8075BVFR800V 12A 0.750POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 6.4. Size:376K  inchange semiconductor
 apt8075bvr.pdf

APT8075BN APT8075BN

isc N-Channel MOSFET Transistor APT8075BVRFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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