IPP030N10N3G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPP030N10N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP030N10N3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 58 nS

Cossⓘ - Capacitancia de salida: 1940 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: TO220

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IPP030N10N3G datasheet

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ipp030n10n3g.pdf pdf_icon

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..2. Size:536K infineon
ipi030n10n3g ipp030n10n3g ipp030n10n3g ipi030n10n3g.pdf pdf_icon

IPP030N10N3 G IPI030N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 3 mW Excellent gate charge x R product (FOM) DS(on) ID 100 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for h

3.1. Size:245K inchange semiconductor
ipp030n10n3.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP030N10N3 IIPP030N10N3 FEATURES Static drain-source on-resistance RDS(on) 3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

4.1. Size:1820K infineon
ipp030n10n5.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPP030N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPP030N10N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-re

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IPP030N10N3G Todos los transistores