Справочник MOSFET. IPP030N10N3G

 

IPP030N10N3G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP030N10N3G
   Маркировка: 030N10N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 155 nC
   trⓘ - Время нарастания: 58 ns
   Cossⓘ - Выходная емкость: 1940 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IPP030N10N3G

 

 

IPP030N10N3G Datasheet (PDF)

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IPP030N10N3G IPP030N10N3G

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 ipi030n10n3g ipp030n10n3g ipp030n10n3g ipi030n10n3g.pdf

IPP030N10N3G IPP030N10N3G

IPP030N10N3 G IPI030N10N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 100 V N-channel, normal levelRDS(on),max 3mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for h

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IPP030N10N3G IPP030N10N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP030N10N3IIPP030N10N3FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

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 ipp030n10n5.pdf

IPP030N10N3G IPP030N10N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPP030N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPP030N10N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-re

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 ipp030n10n5.pdf

IPP030N10N3G IPP030N10N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP030N10N5IIPP030N10N5FEATURESStatic drain-source on-resistance:RDS(on) 3.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

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