IPP040N06N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP040N06N3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 188 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 1700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO220

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IPP040N06N3G datasheet

 ..1. Size:484K  infineon
 ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdf pdf_icon

IPP040N06N3G

Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS R 3.7 for sync. rectification, drives and dc/dc SMPS m DS(on),max (SMD) I 90 A Excellent gate charge x R product (FOM) D DS(on) previous engineering Very low on-resistance R DS(on) sample codes N-channel, normal level IPP04xN06N IPI04xN06N Ava

 ..2. Size:1653K  infineon
 ipp040n06n3g.pdf pdf_icon

IPP040N06N3G

IPP040N06N3 G MOSFET TO-220-3 OptiMOS 3 Power-Transistor, 60 V tab Features for sync. rectification, drives and dc/dc SMPS Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications Pb-free plating; RoHS compliant Halogen-free accordi

 3.1. Size:246K  inchange semiconductor
 ipp040n06n3.pdf pdf_icon

IPP040N06N3G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP040N06N3 IIPP040N06N3 FEATURES Static drain-source on-resistance RDS(on) 3.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

 4.1. Size:458K  infineon
 ipp040n06n.pdf pdf_icon

IPP040N06N3G

Type IPP040N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 4.0 mW Superior thermal resistance ID 80 A N-channel QOSS nC 44 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 38 Pb-free lead plating; RoHS compliant Hal

MOSTRAR MÁS

Otros transistores... IPP028N08N3G, IPP030N10N3G, IPP032N06N3G, IPP034N03LG, IPP034NE7N3G, IPP037N06L3G, IPP037N08N3G, IPP039N04LG, NCEP15T14, IPP041N04NG, IPP041N12N3G, IPP042N03LG, IPP045N10N3G, IPP048N04NG, IPP048N12N3G, IPP04CN10NG, IPP04N03LBG