IPP040N06N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPP040N06N3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 188 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 1700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO220

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IPP040N06N3G Datasheet (PDF)

..1. Size:484K infineon
ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdf

Type IPB037N06N3 G IPI040N06N3 GIPP040N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDSR 3.7 for sync. rectification, drives and dc/dc SMPS mDS(on),max (SMD)I 90 A Excellent gate charge x R product (FOM) DDS(on)previous engineering Very low on-resistance RDS(on)sample codes: N-channel, normal level IPP04xN06NIPI04xN06N Ava

..2. Size:1653K infineon
ipp040n06n3g.pdf

IPP040N06N3 GMOSFETTO-220-3OptiMOS3 Power-Transistor, 60 VtabFeatures for sync. rectification, drives and dc/dc SMPS Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications Pb-free plating; RoHS compliant Halogen-free accordi

3.1. Size:246K inchange semiconductor
ipp040n06n3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP040N06N3IIPP040N06N3FEATURESStatic drain-source on-resistance:RDS(on) 3.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

4.1. Size:458K infineon
ipp040n06n.pdf

TypeIPP040N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 4.0 mW Superior thermal resistanceID 80 A N-channelQOSS nC 44 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 38 Pb-free lead plating; RoHS compliant Hal

4.2. Size:246K inchange semiconductor
ipp040n06n.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP040N06NIIPP040N06NFEATURESStatic drain-source on-resistance:RDS(on) 4.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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