IPP040N06N3G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPP040N06N3G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 188 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 1700 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP040N06N3G
IPP040N06N3G Datasheet (PDF)
ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdf

Type IPB037N06N3 G IPI040N06N3 GIPP040N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDSR 3.7 for sync. rectification, drives and dc/dc SMPS mDS(on),max (SMD)I 90 A Excellent gate charge x R product (FOM) DDS(on)previous engineering Very low on-resistance RDS(on)sample codes: N-channel, normal level IPP04xN06NIPI04xN06N Ava
ipp040n06n3g.pdf

IPP040N06N3 GMOSFETTO-220-3OptiMOS3 Power-Transistor, 60 VtabFeatures for sync. rectification, drives and dc/dc SMPS Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications Pb-free plating; RoHS compliant Halogen-free accordi
ipp040n06n3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP040N06N3IIPP040N06N3FEATURESStatic drain-source on-resistance:RDS(on) 3.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M
ipp040n06n.pdf

TypeIPP040N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 4.0 mW Superior thermal resistanceID 80 A N-channelQOSS nC 44 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 38 Pb-free lead plating; RoHS compliant Hal
Другие MOSFET... IPP028N08N3G , IPP030N10N3G , IPP032N06N3G , IPP034N03LG , IPP034NE7N3G , IPP037N06L3G , IPP037N08N3G , IPP039N04LG , IRFP450 , IPP041N04NG , IPP041N12N3G , IPP042N03LG , IPP045N10N3G , IPP048N04NG , IPP048N12N3G , IPP04CN10NG , IPP04N03LBG .
History: RE1C002UN | SRT15N090HS2 | 2N6792JANT | SFG130N10KF | IRFB4110PBF | CI72N65 | JST2302H
History: RE1C002UN | SRT15N090HS2 | 2N6792JANT | SFG130N10KF | IRFB4110PBF | CI72N65 | JST2302H



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