IPP045N10N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP045N10N3G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 214 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 59 nS
Cossⓘ - Capacitancia de salida: 1210 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de IPP045N10N3G MOSFET
- Selecciónⓘ de transistores por parámetros
IPP045N10N3G datasheet
..1. Size:748K infineon
ipp045n10n3g.pdf 
IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G 3 Power-Transistor Product Summary Features V 1 D Q ' 381>>5?B=1
9.1. Size:484K infineon
ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdf
Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS R 3.7 for sync. rectification, drives and dc/dc SMPS m DS(on),max (SMD) I 90 A Excellent gate charge x R product (FOM) D DS(on) previous engineering Very low on-resistance R DS(on) sample codes N-channel, normal level IPP04xN06N IPI04xN06N Ava
9.3. Size:508K infineon
ipb038n12n3-g ipi041n12n3-g ipp041n12n3-g.pdf
IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 120 V DS N-channel, normal level R 3.8 m DS(on),max (TO-263) Excellent gate charge x R product (FOM) DS(on) I 120 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to
9.4. Size:871K infineon
ipb04cn10ng ipi04cn10n ipp04cn10n.pdf
IPB04CN10N G IPI04CN10N G IPP04CN10N G 2 Power-Transistor Product Summary Features V 1 D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I 1 D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E4
9.5. Size:566K infineon
ipp048n12n3g.pdf
$$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 120 V DS R ( 492??6= ?@C>2= =6G6= 4.8 m - @? >2I R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 100 A D R /6CJ =@H @? C6D DE2?46 DS(on) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E PG TO220 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?49C@?
9.6. Size:612K infineon
ipp042n03l .pdf
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9.7. Size:1653K infineon
ipp040n06n3g.pdf
IPP040N06N3 G MOSFET TO-220-3 OptiMOS 3 Power-Transistor, 60 V tab Features for sync. rectification, drives and dc/dc SMPS Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications Pb-free plating; RoHS compliant Halogen-free accordi
9.8. Size:535K infineon
ipp04n03lb rev0.95.pdf
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9.9. Size:874K infineon
ipb04cn10ng ipi04cn10ng ipp04cn10ng ipp04cn10n .pdf
IPB04CN10N G IPI04CN10N G IPP04CN10N G 2 Power-Transistor Product Summary Features V 1 D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I 1 D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E4
9.10. Size:611K infineon
ipp042n03l.pdf
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9.11. Size:458K infineon
ipp040n06n.pdf
Type IPP040N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 4.0 mW Superior thermal resistance ID 80 A N-channel QOSS nC 44 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 38 Pb-free lead plating; RoHS compliant Hal
9.12. Size:734K infineon
ipb048n06lg ipp048n06lg5.pdf
IPP048N06L G IPB048N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R 4 4 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C
9.13. Size:873K infineon
ipi041n12n3g ipp041n12n3g ipb038n12n3g.pdf
IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on),max (TO-263) 3.8 mW Excellent gate charge x R product (FOM) DS(on) ID 120 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JE
9.14. Size:565K infineon
ipp048n04n.pdf
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9.15. Size:1926K cn vbsemi
ipp048n06.pdf
IPP048N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0090 Package with Low Thermal Resistance ID (A) 210 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2002/9
9.16. Size:2138K cn vbsemi
ipp048n04.pdf
IPP048N04 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0055 at VGS = 10 V 100 COMPLIANT 40 130 nC 0.0070 at VGS = 4.5 V 90 APPLICATIONS Synchronous Rectification TO-220AB Power Supplies D G S G D S Top View N-Channel MOSFET ABSOLUT
9.17. Size:246K inchange semiconductor
ipp04cn10n.pdf
NCHANGE Semicon Iductor isc N-Channel MOSFET Transistor IPP04CN10N IIPP04CN10N FEATURES Static drain-source on-resistance RDS(on) 3.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MA
9.18. Size:245K inchange semiconductor
ipp041n04n.pdf
isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04N FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching for SMPS Optimized technology for DC/DC converters ABSOLUTE MAXIMUM RATINGS(T
9.19. Size:246K inchange semiconductor
ipp042n03l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP042N03L IIPP042N03L FEATURES Static drain-source on-resistance RDS(on) 4.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE
9.20. Size:246K inchange semiconductor
ipp040n06n.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP040N06N IIPP040N06N FEATURES Static drain-source on-resistance RDS(on) 4.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX
9.21. Size:245K inchange semiconductor
ipp048n12n3.pdf
isc N-Channel MOSFET Transistor IPP048N12N3 IIPP048N12N3 FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T
9.22. Size:246K inchange semiconductor
ipp040n06n3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP040N06N3 IIPP040N06N3 FEATURES Static drain-source on-resistance RDS(on) 3.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M
9.23. Size:246K inchange semiconductor
ipp048n04n.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP048N04N IIPP048N04N FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX
9.24. Size:245K inchange semiconductor
ipp041n12n3.pdf
isc N-Channel MOSFET Transistor IPP041N12N3 IIPP041N12N3 FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(
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