All MOSFET. IPP045N10N3G Datasheet

 

IPP045N10N3G MOSFET. Datasheet pdf. Equivalent

Type Designator: IPP045N10N3G

Marking Code: 045N10N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 214 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 88 nC

Rise Time (tr): 59 nS

Drain-Source Capacitance (Cd): 1210 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package: TO220

IPP045N10N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP045N10N3G Datasheet (PDF)

0.1. ipp045n10n3g.pdf Size:748K _infineon

IPP045N10N3G
IPP045N10N3G

IPB042N10N3 G IPI045N10N3 GIPP045N10N3 G3 Power-TransistorProduct SummaryFeaturesV 1 D Q ' 381>>5?B=1

3.1. ipb042n10n3-g ipi045n10n3-g ipp045n10n3-g ipb042n10n3ge8187.pdf Size:746K _infineon

IPP045N10N3G
IPP045N10N3G

IPB042N10N3 G IPI045N10N3 GIPP045N10N3 G3 Power-TransistorProduct SummaryFeaturesV 1 D Q ' 381>>5?B=1

 9.1. ipp048n04n.pdf Size:565K _infineon

IPP045N10N3G
IPP045N10N3G

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9.2. ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdf Size:484K _infineon

IPP045N10N3G
IPP045N10N3G

Type IPB037N06N3 G IPI040N06N3 GIPP040N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDSR 3.7 for sync. rectification, drives and dc/dc SMPS mDS(on),max (SMD)I 90 A Excellent gate charge x R product (FOM) DDS(on)previous engineering Very low on-resistance RDS(on)sample codes: N-channel, normal level IPP04xN06NIPI04xN06N Ava

 9.3. ipb038n12n3-g ipi041n12n3-g ipp041n12n3-g.pdf Size:508K _infineon

IPP045N10N3G
IPP045N10N3G

IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 120 VDS N-channel, normal levelR 3.8mDS(on),max (TO-263) Excellent gate charge x R product (FOM)DS(on)I 120 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to

9.4. ipp048n12n3g.pdf Size:566K _infineon

IPP045N10N3G
IPP045N10N3G

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 9.5. ipp04n03lb rev0.95.pdf Size:535K _infineon

IPP045N10N3G
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9.6. ipp04cn10n .pdf Size:874K _infineon

IPP045N10N3G
IPP045N10N3G

IPB04CN10N G IPI04CN10N GIPP04CN10N G 2 Power-TransistorProduct SummaryFeaturesV 1 D R ( 492??6= ?@C>2= =6G6=R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I 1 DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E4

9.7. ipp042n03l.pdf Size:611K _infineon

IPP045N10N3G
IPP045N10N3G

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9.8. ipb04cn10ng ipi04cn10n ipp04cn10n.pdf Size:871K _infineon

IPP045N10N3G
IPP045N10N3G

IPB04CN10N G IPI04CN10N GIPP04CN10N G 2 Power-TransistorProduct SummaryFeaturesV 1 D R ( 492??6= ?@C>2= =6G6=R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I 1 DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E4

9.9. ipb041n04n-g ipp041n04n-g.pdf Size:688K _infineon

IPP045N10N3G
IPP045N10N3G

Type IPP041N04N GIPB041N04N G 3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 4.1mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

9.10. ipb048n06lg ipp048n06lg5.pdf Size:734K _infineon

IPP045N10N3G
IPP045N10N3G

IPP048N06L G IPB048N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 4 4 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

9.11. ipp042n03l .pdf Size:612K _infineon

IPP045N10N3G
IPP045N10N3G

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9.12. ipp040n06n.pdf Size:458K _infineon

IPP045N10N3G
IPP045N10N3G

TypeIPP040N06NOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 4.0 mW Superior thermal resistanceID 80 A N-channelQOSS nC 44 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 38 Pb-free lead plating; RoHS compliant Hal

9.13. ipp048n04n.pdf Size:246K _inchange_semiconductor

IPP045N10N3G
IPP045N10N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP048N04NIIPP048N04NFEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX

9.14. ipp04cn10n.pdf Size:246K _inchange_semiconductor

IPP045N10N3G
IPP045N10N3G

NCHANGE Semicon Iductorisc N-Channel MOSFET Transistor IPP04CN10NIIPP04CN10NFEATURESStatic drain-source on-resistance:RDS(on) 3.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA

9.15. ipp041n04n.pdf Size:245K _inchange_semiconductor

IPP045N10N3G
IPP045N10N3G

isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04NFEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switching for SMPSOptimized technology for DC/DC convertersABSOLUTE MAXIMUM RATINGS(T

9.16. ipp042n03l.pdf Size:246K _inchange_semiconductor

IPP045N10N3G
IPP045N10N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP042N03LIIPP042N03LFEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

9.17. ipp040n06n3.pdf Size:246K _inchange_semiconductor

IPP045N10N3G
IPP045N10N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP040N06N3IIPP040N06N3FEATURESStatic drain-source on-resistance:RDS(on) 3.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

9.18. ipp041n12n3.pdf Size:245K _inchange_semiconductor

IPP045N10N3G
IPP045N10N3G

isc N-Channel MOSFET Transistor IPP041N12N3IIPP041N12N3FEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(

9.19. ipp048n12n3.pdf Size:245K _inchange_semiconductor

IPP045N10N3G
IPP045N10N3G

isc N-Channel MOSFET Transistor IPP048N12N3IIPP048N12N3FEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

9.20. ipp040n06n.pdf Size:246K _inchange_semiconductor

IPP045N10N3G
IPP045N10N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP040N06NIIPP040N06NFEATURESStatic drain-source on-resistance:RDS(on) 4.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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