BF1100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BF1100
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 14 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 2.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm
   Paquete / Cubierta: SOT143

Búsqueda de reemplazo de MOSFET BF1100

BF1100 Datasheet (PDF)

..1. Size:311K philips
bf1100 n.pdf

BF1100; BF1100RDual-gate MOS-FETsRev. 02 13 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.ht

..2. Size:159K philips
bf1100 bf1100r 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Speciall

..3. Size:109K philips
bf1100 bf1100r 01.pdf

0.1. Size:439K philips
bf1100wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBF1100WRDual-gate MOS-FETProduct specification 1995 Apr 25NXP Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d drain

0.2. Size:100K philips
bf1100wr 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

0.3. Size:146K philips
bf1100wr 0.pdf

Otros transistores... APT8058HVR , APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , APT8075BN , APT8075BVR , IRFP260N , BF1100R , BF1100WR , BF1101 , BF1101R , BF1101WR , BF1102 , BF1105 , BF1105R .

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