Справочник MOSFET. BF1100

 

BF1100 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BF1100
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 14 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.03 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 2.2 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 200 Ohm
   Тип корпуса: SOT143
     - подбор MOSFET транзистора по параметрам

 

BF1100 Datasheet (PDF)

 ..1. Size:311K  philips
 bf1100 n.pdf pdf_icon

BF1100

BF1100; BF1100RDual-gate MOS-FETsRev. 02 13 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.ht

 ..2. Size:159K  philips
 bf1100 bf1100r 1.pdf pdf_icon

BF1100

DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Speciall

 ..3. Size:109K  philips
 bf1100 bf1100r 01.pdf pdf_icon

BF1100

DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Speciall

 0.1. Size:439K  philips
 bf1100wr.pdf pdf_icon

BF1100

DISCRETE SEMICONDUCTORS DATA SHEETBF1100WRDual-gate MOS-FETProduct specification 1995 Apr 25NXP Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d drain

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APT8058HVR , APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , APT8075BN , APT8075BVR , AON6414A , BF1100R , BF1100WR , BF1101 , BF1101R , BF1101WR , BF1102 , BF1105 , BF1105R .

History: FQU13N10L | OSG55R074HSZF | FDC654P | SPD04N60C3 | 2SK1501 | IXFP12N50PM | PNMET20V06E

 

 
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