IPP055N03LG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP055N03LG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 68 W

Tensión drenaje-fuente (Vds): 30 V

Corriente continua de drenaje (Id): 50 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 31 nC

Resistencia drenaje-fuente RDS(on): 0.0055 Ohm

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET IPP055N03LG

IPP055N03LG Datasheet (PDF)

1.1. ipp055n03l rev2.0.pdf Size:730K _infineon

Type IPP055N03L G IPB055N03L G � 3 Power-Transistor Product Summary Features V 30 V DS � Fast switching MOSFET for SMPS R 5.5 mW DS(on),max � Optimized technology for DC/DC converters I 50 A D � Qualified according to JEDEC1) for target applications � N-channel, logic level � Excellent gate charge x R product (FOM) DS(on) � Very low on-resistance R DS(on) � Avalanche rated �

1.2. ipp055n03l.pdf Size:322K _infineon

Type IPP055N03L G IPB055N03L G OptiMOS™3 Power-Transistor Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 5.5 mΩ DS(on),max • Optimized technology for DC/DC converters I 50 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on

5.1. ipp052n08n5.pdf Size:1809K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 80 V IPP052N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSª5 Power-Transistor, 80 V IPP052N08N5 TO-220-3 1 Description tab Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x R product (FOM) DS(on) • Very low on-resis

5.2. ipp05cn10n rev1.2.pdf Size:781K _infineon

IPB05CN10N G IPI05CN10N G IPP05CN10N G � 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D:DE2?46 R DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6

5.3. ipp057n06n3 ipb057n06n3 rev2.2.pdf Size:691K _infineon

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5.4. ipp054ne8n rev1.2.pdf Size:875K _infineon

IPB051NE8N G IPI05CNE8N G IPP054NE8N G � 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R 1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I 1 D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8

5.5. ipb050n06ng ipp050n06ng rev1.16.pdf Size:731K _infineon

IPP050N06N G IPB050N06N G � Power-Transistor Product Summary Features V D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 4 7 m + >= < 0F +& D4@A8>= O ' 270==4; 4=70=24< 4=B =>@< 0; ;4D4; I 1 D O R >?4@0B8=6 B4< ?4@0BC@4 O D0;0=274 @0B43 O )1 5@44 ;403 ?;0B8=6 * >"+ 2>< ?;80=B O "0;>64= 5@44 022>@38=6 B> # Type #)) ' ' #) ' ' Package ? O ? ? O ? Marking N N N N

5.6. ipp052n06l3 ipb052n06l3 rev2.4.pdf Size:683K _infineon

pe IPB049N06L3 G IPP052N06L3 G � 3 Power-Transistor Product Summary Features V D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D

5.7. ipp05cn10l rev1[1].02.pdf Size:563K _infineon

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Otros transistores... IPP042N03LG , IPP045N10N3G , IPP048N04NG , IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IRFP250N , IPP057N06N3G , IPP057N08N3G , IPP05CN10LG , IPP05CN10NG , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG .

Liste

Recientemente añadidas las descripciónes de los transistores: