IPP055N03LG Todos los transistores

 

IPP055N03LG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP055N03LG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 920 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO220
 

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IPP055N03LG Datasheet (PDF)

 ..1. Size:322K  infineon
ipp055n03l ipp055n03lg ipb055n03lg.pdf pdf_icon

IPP055N03LG

Type IPP055N03L GIPB055N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5.5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 4.1. Size:730K  infineon
ipp055n03l .pdf pdf_icon

IPP055N03LG

Type IPP055N03L GIPB055N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5.5mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 4.2. Size:250K  inchange semiconductor
ipp055n03l.pdf pdf_icon

IPP055N03LG

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP055N03LIIPP055N03LFEATURESStatic drain-source on-resistance:RDS(on) 5.5mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

 9.1. Size:1638K  infineon
ipp051n15n5.pdf pdf_icon

IPP055N03LG

IPP051N15N5MOSFETTO-220-3OptiMOS5 Power-Transistor, 150 VtabFeatures Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and s

Otros transistores... IPP042N03LG , IPP045N10N3G , IPP048N04NG , IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , STP80NF70 , IPP057N06N3G , IPP057N08N3G , IPP05CN10LG , IPP05CN10NG , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG .

History: SRT15N050HTC | SIRA60DP | SFG10R20PF | JMTL2302A

 

 
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