IPP057N08N3G Todos los transistores

 

IPP057N08N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP057N08N3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 963 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de IPP057N08N3G MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPP057N08N3G datasheet

 ..1. Size:1022K  infineon
ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf pdf_icon

IPP057N08N3G

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G 3 Power-Transistor Product Summary Features V 80 V DS Q ' 381>>5?B=1

 3.1. Size:526K  infineon
ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf pdf_icon

IPP057N08N3G

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 5.4 m DS(on),max (SMD) Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP06CN08N Pb-free lead plating; RoHS complia

 3.2. Size:245K  inchange semiconductor
ipp057n08n3.pdf pdf_icon

IPP057N08N3G

isc N-Channel MOSFET Transistor IPP057N08N3 IIPP057N08N3 FEATURES Static drain-source on-resistance RDS(on) 5.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25

 6.1. Size:691K  infineon
ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf pdf_icon

IPP057N08N3G

pe IPB054N06N3 G IPP057N06N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

Otros transistores... IPP048N04NG , IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG , IPP057N06N3G , RFP50N06 , IPP05CN10LG , IPP05CN10NG , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG , IPP06CN10LG , IPP06CN10NG .

 

 

 


 
↑ Back to Top
.