IPP057N08N3G Todos los transistores

 

IPP057N08N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP057N08N3G

Código: 057N08N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Carga de compuerta (Qg): 52 nC

Tiempo de elevación (tr): 66 nS

Conductancia de drenaje-sustrato (Cd): 963 pF

Resistencia drenaje-fuente RDS(on): 0.0057 Ohm

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET IPP057N08N3G

 

IPP057N08N3G Datasheet (PDF)

1.1. ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Size:526K _infineon

IPP057N08N3G
IPP057N08N3G

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS®3 Power-Transistor Product Summary Features V 80 V DS • N-channel, normal level R 5.4 mΩ DS(on),max (SMD) • Excellent gate charge x R product (FOM) DS(on) I 80 A D • Very low on-resistance R DS(on) previous engineering • 175 °C operating temperature sample codes: IPP06CN08N • Pb-free lead plating; RoHS complia

1.2. ipp057n08n3.pdf Size:245K _inchange_semiconductor

IPP057N08N3G
IPP057N08N3G

isc N-Channel MOSFET Transistor IPP057N08N3, IIPP057N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃

 2.1. ipp057n06n3 ipb054n06n3.pdf Size:691K _infineon

IPP057N08N3G
IPP057N08N3G

 pe IPB054N06N3 G IPP057N06N3 G ™ 3 Power-Transistor Product Summary Features V D Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?

2.2. ipp057n06n3 ipb057n06n3 rev2.2.pdf Size:691K _infineon

IPP057N08N3G
IPP057N08N3G

pe IPB054N06N3 G IPP057N06N3 G 3 Power-Transistor Product Summary Features V D Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?>C Q

 2.3. ipp057n06n3.pdf Size:246K _inchange_semiconductor

IPP057N08N3G
IPP057N08N3G

isc N-Channel MOSFET Transistor IPP057N06N3, IIPP057N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ideal for high frequency switching ·Optimized technology for DC/DC converters ·ABSOLUTE M

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


IPP057N08N3G
  IPP057N08N3G
  IPP057N08N3G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F | NSVJ3557SA3 | NP90N06VLG | NP90N055VUK | NP90N055VUG | NP90N055VDG | NP90N055PUH | NP90N055PDH | NP90N055NUK | NP90N055NUH | NP90N055NDH | NP90N055MUK |

 

 

 
Back to Top