IPP057N08N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP057N08N3G

Código: 057N08N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Carga de compuerta (Qg): 52 nC

Tiempo de elevación (tr): 66 nS

Conductancia de drenaje-sustrato (Cd): 963 pF

Resistencia drenaje-fuente RDS(on): 0.0057 Ohm

Empaquetado / Estuche: TO220

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IPP057N08N3G Datasheet (PDF)

1.1. ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Size:526K _infineon

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS®3 Power-Transistor Product Summary Features V 80 V DS • N-channel, normal level R 5.4 mΩ DS(on),max (SMD) • Excellent gate charge x R product (FOM) DS(on) I 80 A D • Very low on-resistance R DS(on) previous engineering • 175 °C operating temperature sample codes: IPP06CN08N • Pb-free lead plating; RoHS complia

1.2. ipp057n08n3.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPP057N08N3， IIPP057N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃

2.1. ipp057n06n3 ipb054n06n3.pdf Size:691K _infineon

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2.2. ipp057n06n3 ipb057n06n3 rev2.2.pdf Size:691K _infineon

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2.3. ipp057n06n3.pdf Size:246K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPP057N06N3， IIPP057N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ideal for high frequency switching ·Optimized technology for DC/DC converters ·ABSOLUTE M

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