IPP057N08N3G Spec and Replacement
Type Designator: IPP057N08N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 963 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: TO220
IPP057N08N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP057N08N3G Specs
ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf
IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G 3 Power-Transistor Product Summary Features V 80 V DS Q ' 381>>5?B=1... See More ⇒
ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf
IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 5.4 m DS(on),max (SMD) Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP06CN08N Pb-free lead plating; RoHS complia... See More ⇒
ipp057n08n3.pdf
isc N-Channel MOSFET Transistor IPP057N08N3 IIPP057N08N3 FEATURES Static drain-source on-resistance RDS(on) 5.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf
pe IPB054N06N3 G IPP057N06N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1... See More ⇒
Detailed specifications: IPP048N04NG , IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG , IPP057N06N3G , RFP50N06 , IPP05CN10LG , IPP05CN10NG , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG , IPP06CN10LG , IPP06CN10NG .
History: IPP60R190P6 | AP02N90JB
Keywords - IPP057N08N3G MOSFET specs
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