All MOSFET. IPP057N08N3G Datasheet

 

IPP057N08N3G Datasheet and Replacement


   Type Designator: IPP057N08N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 963 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO220
 

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IPP057N08N3G Datasheet (PDF)

 ..1. Size:1022K  infineon
 ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf pdf_icon

IPP057N08N3G

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 G 3 Power-TransistorProduct SummaryFeaturesV 80 VDSQ ' 381>>5?B=1

 3.1. Size:526K  infineon
 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf pdf_icon

IPP057N08N3G

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS complia

 3.2. Size:245K  inchange semiconductor
 ipp057n08n3.pdf pdf_icon

IPP057N08N3G

isc N-Channel MOSFET Transistor IPP057N08N3 IIPP057N08N3FEATURESStatic drain-source on-resistance:RDS(on) 5.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25

 6.1. Size:691K  infineon
 ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf pdf_icon

IPP057N08N3G

pe IPB054N06N3 G IPP057N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

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Datasheet: IPP048N04NG , IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG , IPP057N06N3G , SKD502T , IPP05CN10LG , IPP05CN10NG , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG , IPP06CN10LG , IPP06CN10NG .

History: CM60N03C | FQB9P25

Keywords - IPP057N08N3G MOSFET datasheet

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