IPP05CN10NG Todos los transistores

 

IPP05CN10NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP05CN10NG

Código: 05CN10N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 136 nC

Tiempo de elevación (tr): 42 nS

Conductancia de drenaje-sustrato (Cd): 1370 pF

Resistencia drenaje-fuente RDS(on): 0.0054 Ohm

Empaquetado / Estuche: TO220

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IPP05CN10NG Datasheet (PDF)

1.1. ipp05cn10l rev1[1].02.pdf Size:563K _infineon

IPP05CN10NG
IPP05CN10NG

%% # ! % (>.;?6?@<> %><1A0@ 'A::.>E Features 1 D U ) 7<5BB9@ @C;=7 @9J9@ 1 m D n) m x U L79@@9BH ;5H9 7<5F;9 L D n) DFC8I7H !* ( 1 D U 09FM @CK CB F9G=GH5B79 D n) U X CD9F5H=B; H9AD9F5HIF9 U +6 :F99 @958 D@5H=B; - C#. 7CAD@=5BH 1) U , I5@=:=98 577CF8=B; HC % :CF H5F;9H 5DD@=75H=CB U $895@ :CF <=;< :F9EI9B7M GK=H7<=B; 5B8 GMB71.2. ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf Size:781K _infineon

IPP05CN10NG
IPP05CN10NG

IPB05CN10N G IPI05CN10N G IPP05CN10N G ™ 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D:DE2?46 R DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7

 1.3. ipp05cn10n rev1.2.pdf Size:781K _infineon

IPP05CN10NG
IPP05CN10NG

IPB05CN10N G IPI05CN10N G IPP05CN10N G 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D:DE2?46 R DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6

1.4. ipp05cn10n.pdf Size:245K _inchange_semiconductor

IPP05CN10NG
IPP05CN10NG

isc N-Channel MOSFET Transistor IPP05CN10N,IIPP05CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

Otros transistores... IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG , IPP057N06N3G , IPP057N08N3G , IPP05CN10LG , IRFP260N , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG , IPP06CN10LG , IPP06CN10NG , IPP070N06LG , IPP070N06NG .

 

 
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