All MOSFET. IPP05CN10NG Datasheet

 

IPP05CN10NG Datasheet and Replacement


   Type Designator: IPP05CN10NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 1370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO220
 

 IPP05CN10NG substitution

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IPP05CN10NG Datasheet (PDF)

 4.1. Size:781K  infineon
 ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf pdf_icon

IPP05CN10NG

IPB05CN10N G IPI05CN10N GIPP05CN10N G 2 Power-TransistorProduct SummaryFeaturesV 100 VDSR ( 492??6= ?@C>2= =6G6=R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on)I 100 ADR /6CJ =@H @? C6D:DE2?46 RDS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7

 4.2. Size:245K  inchange semiconductor
 ipp05cn10n.pdf pdf_icon

IPP05CN10NG

isc N-Channel MOSFET Transistor IPP05CN10NIIPP05CN10NFEATURESStatic drain-source on-resistance:RDS(on) 5.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 5.1. Size:563K  infineon
 ipp05cn10l2.pdf pdf_icon

IPP05CN10NG

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Datasheet: IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG , IPP057N06N3G , IPP057N08N3G , IPP05CN10LG , 7N60 , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG , IPP06CN10LG , IPP06CN10NG , IPP070N06LG , IPP070N06NG .

Keywords - IPP05CN10NG MOSFET datasheet

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