BF1100R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BF1100R
Código: %MZ_M57
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 14 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VCossⓘ - Capacitancia de salida: 2.2 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm
Paquete / Cubierta: SOT143R
Búsqueda de reemplazo de MOSFET BF1100R
BF1100R Datasheet (PDF)
bf1100 bf1100r 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Speciall
bf1100 bf1100r 01.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Speciall
bf1100wr.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBF1100WRDual-gate MOS-FETProduct specification 1995 Apr 25NXP Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d drain
bf1100 n.pdf
BF1100; BF1100RDual-gate MOS-FETsRev. 02 13 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.ht
bf1100wr 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward trans
bf1100wr 0.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward trans
Otros transistores... APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , APT8075BN , APT8075BVR , BF1100 , IRFB4227 , BF1100WR , BF1101 , BF1101R , BF1101WR , BF1102 , BF1105 , BF1105R , BF1105WR .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918