BF1100R MOSFET Datasheet: N-Ch, 14V, 0.03A. Full specification with pinout and replacement list

BF1100R Specs and Replacement

Type Designator: BF1100R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 14 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 2.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm

Package: SOT143R

BF1100R substitution

- MOSFET ⓘ Cross-Reference Search

BF1100R datasheet

..1. Size:159K philips
bf1100 bf1100r 1.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to FEATURES ensure good cross-modulation performance during AGC. Speciall... See More ⇒

..2. Size:109K philips
bf1100 bf1100r 01.pdf pdf_icon

8.1. Size:439K philips
bf1100wr.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification 1995 Apr 25 NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES PINNING Specially designed for use at 9 to 12 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b source admittance to input capacitance ratio 2 d drain ... See More ⇒

8.2. Size:311K philips
bf1100 n.pdf pdf_icon

BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ht... See More ⇒