All MOSFET. BF1100R Datasheet

 

BF1100R MOSFET. Datasheet pdf. Equivalent


   Type Designator: BF1100R
   Marking Code: %MZ_M57
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.2 W
   Maximum Drain-Source Voltage |Vds|: 14 V
   Maximum Drain Current |Id|: 0.03 A
   Maximum Junction Temperature (Tj): 150 °C
   Drain-Source Capacitance (Cd): 2.2 pF
   Maximum Drain-Source On-State Resistance (Rds): 200 Ohm
   Package: SOT143R

 BF1100R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BF1100R Datasheet (PDF)

 ..1. Size:159K  philips
bf1100 bf1100r 1.pdf

BF1100R
BF1100R

DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Speciall

 ..2. Size:109K  philips
bf1100 bf1100r 01.pdf

BF1100R
BF1100R

DISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FETs BF1100; BF1100Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Speciall

 8.1. Size:311K  philips
bf1100 n.pdf

BF1100R
BF1100R

BF1100; BF1100RDual-gate MOS-FETsRev. 02 13 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.ht

 8.2. Size:100K  philips
bf1100wr 1.pdf

BF1100R
BF1100R

DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

 8.3. Size:146K  philips
bf1100wr 0.pdf

BF1100R
BF1100R

DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward trans

 8.4. Size:439K  philips
bf1100wr.pdf

BF1100R
BF1100R

DISCRETE SEMICONDUCTORS DATA SHEETBF1100WRDual-gate MOS-FETProduct specification 1995 Apr 25NXP Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d drain

Datasheet: APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , APT8075BN , APT8075BVR , BF1100 , IRFB4110 , BF1100WR , BF1101 , BF1101R , BF1101WR , BF1102 , BF1105 , BF1105R , BF1105WR .

 

 
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