IPP072N10N3G Todos los transistores

 

IPP072N10N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP072N10N3G

Código: 072N10N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Carga de compuerta (Qg): 51 nC

Tiempo de elevación (tr): 37 nS

Conductancia de drenaje-sustrato (Cd): 646 pF

Resistencia drenaje-fuente RDS(on): 0.0072 Ohm

Empaquetado / Estuche: TO220

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IPP072N10N3G Datasheet (PDF)

1.1. ipp072n10n3-g ipi072n10n3-g.pdf Size:316K _update-mosfet

IPP072N10N3G
IPP072N10N3G

IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 7.2 mΩ DS(on),max • Excellent gate charge x R product (FOM) DS(on) I 80 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Id

1.2. ipp072n10n3.pdf Size:246K _inchange_semiconductor

IPP072N10N3G
IPP072N10N3G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP072N10N3, IIPP072N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE

 5.1. ipp07n03l ipb07n03l.pdf Size:162K _update-mosfet

IPP072N10N3G
IPP072N10N3G

IPP07N03L IPB07N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V • N-Channel RDS(on) max. SMD version 5.9 mΩ • Logic Level ID 80 A • Low On-Resistance RDS(on) P- TO263 -3-2 P- TO220 -3-1 • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for f

5.2. ipp076n15n5.pdf Size:1542K _infineon

IPP072N10N3G
IPP072N10N3G

IPP076N15N5 MOSFET TO-220-3 OptiMOSª5 Power-Transistor, 150 V tab Features • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) • Very low reverse recovery charge (Q rr) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and

 5.3. ipb070n06lg ipp070n06lg rev1.27.pdf Size:736K _infineon

IPP072N10N3G
IPP072N10N3G

IPB070N06L G IPP070N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( & ! #** ( & ! Type Package Marking #* ( & ! G? O ? ? G? N

5.4. ipb072n15n3-g ipp075n15n3-g ipi075n15n3-g.pdf Size:424K _infineon

IPP072N10N3G
IPP072N10N3G

IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOS™3 Power-Transistor Product Summary Features V 150 V DS • N-channel, normal level R 7.2 mΩ DS(on),max (TO263) • Excellent gate charge x R product (FOM) DS(on) I 100 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for tar

 5.5. ipp070n08n3 ipi070n08n3 ipb067n08n3.pdf Size:1021K _infineon

IPP072N10N3G
IPP072N10N3G

IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G ™ 3 Power-Transistor Product Summary Features V D Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D

5.6. ipb070n06ng ipp070n06ng ipi070n06ngrev1.4.pdf Size:894K _infineon

IPP072N10N3G
IPP072N10N3G

IPB070N06N G IPP070N06N G IPI070N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@<931C9?>B R 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C >?A=1< <5E5< I D P S ?@5A1C9>7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( ( ! #** ( ( ! #*# ( ( ! Type Package Marking #*

5.7. ipp070n08n3 rev2.3.pdf Size:1021K _infineon

IPP072N10N3G
IPP072N10N3G

IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G 3 Power-Transistor Product Summary Features V D Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<

5.8. ipp076n12n3g ipi076n12n3g rev2.3.pdf Size:571K _infineon

IPP072N10N3G
IPP072N10N3G

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5.9. ipp076n15n5.pdf Size:245K _inchange_semiconductor

IPP072N10N3G
IPP072N10N3G

isc N-Channel MOSFET Transistor IPP076N15N5,IIPP076N15N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(T

5.10. ipp075n15n3.pdf Size:244K _inchange_semiconductor

IPP072N10N3G
IPP072N10N3G

isc N-Channel MOSFET Transistor IPP075N15N3, IIPP075N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

5.11. ipp070n08n3.pdf Size:246K _inchange_semiconductor

IPP072N10N3G
IPP072N10N3G

isc N-Channel MOSFET Transistor IPP070N08N3,IIPP070N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high frequency switching and sync. Rec. ·Optimized technology for DC/DC converters

5.12. ipp076n12n3.pdf Size:245K _inchange_semiconductor

IPP072N10N3G
IPP072N10N3G

isc N-Channel MOSFET Transistor IPP076N12N3, IIPP076N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(

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