IPP072N10N3G MOSFET. Datasheet pdf. Equivalent

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IPP072N10N3 G IPI072N10N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 7.2mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Id

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP072N10N3IIPP072N10N3FEATURESStatic drain-source on-resistance:RDS(on) 7.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

IPB070N06L G IPP070N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

IPP076N15N5MOSFETTO-220-3OptiMOS5 Power-Transistor, 150 VtabFeatures Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and

IPP07N03LIPB07N03LOptiMOS Buck converter seriesProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 5.9 m Logic LevelID 80 A Low On-Resistance RDS(on)P- TO263 -3-2 P- TO220 -3-1 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ideal for f

IPP070N08N3 G IPI070N08N3 GIPB067N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

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IPI076N12N3 G IPP076N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on)max 7.6 mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati

IPP070N08N3 G IPI070N08N3 GIPB067N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

IPB070N06N G IPP070N06N GIPI070N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1

IPB072N15N3 G IPP075N15N3 GIPI075N15N3 G 3 Power-TransistorProduct SummaryFeaturesV 150 VDSQ ' 381>>5?B=1

IPB072N15N3 G IPP075N15N3 GIPI075N15N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 7.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar

isc N-Channel MOSFET Transistor IPP075N15N3IIPP075N15N3FEATURESStatic drain-source on-resistance:RDS(on) 7.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONEfficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

isc N-Channel MOSFET Transistor IPP076N15N5IIPP076N15N5FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

isc N-Channel MOSFET Transistor IPP070N08N3,IIPP070N08N3FEATURESStatic drain-source on-resistance:RDS(on) 6.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high frequency switching and sync. Rec.Optimized technology for DC/DC converters

isc N-Channel MOSFET Transistor IPP076N12N3IIPP076N12N3FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(