IPP096N03LG Todos los transistores

 ..1. Size:636K  infineon
 ipb096n03lg ipp096n03lg.pdf

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 4.1. Size:614K  infineon
 ipp096n03l.pdf

pe %% # ! % # ! % (>.;?6?@ %>E Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m - @? >2H Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Q "2=@86? 7B66 244@B

 4.2. Size:617K  infineon
 ipp096n03l .pdf

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 9.1. Size:687K  infineon
 ipb090n06n3g ipp093n06n3g.pdf

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35

 9.2. Size:295K  infineon
 ipb090n06n3 ipp093n06n3.pdf

 9.3. Size:311K  infineon
 ipb09n03la ipi09n03la ipp09n03la.pdf

IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.9 m DS(on),max N-channel I 50 A D Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance 1

 9.4. Size:687K  infineon
 ipp093n06n3 ipb093n06n3.pdf

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35

 9.5. Size:245K  inchange semiconductor
 ipp093n06n3.pdf

isc N-Channel MOSFET Transistor IPP093N06N3 IIPP093N06N3 FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )