IPP096N03LG Todos los transistores

 

IPP096N03LG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP096N03LG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.2 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0096 Ohm
   Paquete / Cubierta: TO220

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IPP096N03LG Datasheet (PDF)

 ..1. Size:636K  infineon
ipb096n03lg ipp096n03lg.pdf

IPP096N03LG
IPP096N03LG

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 4.1. Size:614K  infineon
ipp096n03l.pdf

IPP096N03LG
IPP096N03LG

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 4.2. Size:617K  infineon
ipp096n03l .pdf

IPP096N03LG
IPP096N03LG

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 9.1. Size:687K  infineon
ipb090n06n3g ipp093n06n3g.pdf

IPP096N03LG
IPP096N03LG

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 9.2. Size:295K  infineon
ipb090n06n3 ipp093n06n3.pdf

IPP096N03LG
IPP096N03LG

Type IPB090N06N3 G IPP093N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS for sync. rectification, drives and dc/dc SMPSR 9mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 50 AD Very low on-resistance RDS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications

 9.3. Size:311K  infineon
ipb09n03la ipi09n03la ipp09n03la.pdf

IPP096N03LG
IPP096N03LG

IPB09N03LAIPI09N03LA, IPP09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.9m DS(on),max N-channelI 50 AD Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance 1

 9.4. Size:687K  infineon
ipp093n06n3 ipb093n06n3.pdf

IPP096N03LG
IPP096N03LG

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 9.5. Size:245K  inchange semiconductor
ipp093n06n3.pdf

IPP096N03LG
IPP096N03LG

isc N-Channel MOSFET Transistor IPP093N06N3IIPP093N06N3FEATURESStatic drain-source on-resistance:RDS(on) 9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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