IPP096N03LG Specs and Replacement

Type Designator: IPP096N03LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm

Package: TO220

IPP096N03LG substitution

- MOSFET ⓘ Cross-Reference Search

 

IPP096N03LG datasheet

 ..1. Size:636K  infineon
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IPP096N03LG

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 4.1. Size:614K  infineon
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IPP096N03LG

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 4.2. Size:617K  infineon
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IPP096N03LG

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 9.1. Size:687K  infineon
 ipb090n06n3g ipp093n06n3g.pdf pdf_icon

IPP096N03LG

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Detailed specifications: IPP080N03LG, IPP080N06NG, IPP084N06L3G, IPP085N06LG, IPP086N10N3G, IPP08CN10LG, IPP08CN10NG, IPP093N06N3G, IRFB7545, IPP100N04S4-H2, IPP100N08N3G, IPP110N06LG, IPP110N20N3G, IPP111N15N3G, IPP114N03LG, IPP114N12N3G, IPP120N04S4-01

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.