IPP114N12N3G Todos los transistores

 

IPP114N12N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP114N12N3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 408 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0114 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET IPP114N12N3G

 

IPP114N12N3G Datasheet (PDF)

 ..1. Size:304K  infineon
ipp114n12n3g.pdf

IPP114N12N3G
IPP114N12N3G

IPP114N12N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 120 V N-channel, normal levelRDS(on)max 11.4m Excellent gate charge x R product (FOM)DS(on)ID 75 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target application Ideal for

 3.1. Size:245K  inchange semiconductor
ipp114n12n3.pdf

IPP114N12N3G
IPP114N12N3G

isc N-Channel MOSFET Transistor IPP114N12N3IIPP114N12N3FEATURESStatic drain-source on-resistance:RDS(on) 11.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(

 7.1. Size:300K  infineon
ipb114n03l-g ipp114n03l-g.pdf

IPP114N12N3G
IPP114N12N3G

Type IPP114N03L GIPB114N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 11.4mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 7.2. Size:617K  infineon
ipp114n03l.pdf

IPP114N12N3G
IPP114N12N3G

pe %% # ! % # ! % (>.;?6?@%>EFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- 11 4m - @? >2H Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DQ "2=@86? 7B6

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top

 


IPP114N12N3G
  IPP114N12N3G
  IPP114N12N3G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top