IPP114N12N3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP114N12N3G
Marking Code: 114N12N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 136
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 49
nC
trⓘ - Rise Time: 36
nS
Cossⓘ -
Output Capacitance: 408
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0114
Ohm
Package:
TO220
IPP114N12N3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP114N12N3G
Datasheet (PDF)
..1. Size:304K infineon
ipp114n12n3g.pdf
IPP114N12N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 120 V N-channel, normal levelRDS(on)max 11.4m Excellent gate charge x R product (FOM)DS(on)ID 75 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target application Ideal for
3.1. Size:245K inchange semiconductor
ipp114n12n3.pdf
isc N-Channel MOSFET Transistor IPP114N12N3IIPP114N12N3FEATURESStatic drain-source on-resistance:RDS(on) 11.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(
7.1. Size:300K infineon
ipb114n03l-g ipp114n03l-g.pdf
Type IPP114N03L GIPB114N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 11.4mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
7.2. Size:617K infineon
ipp114n03l.pdf
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