IPP26CN10NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP26CN10NG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 71 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 232 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Paquete / Cubierta: TO220
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IPP26CN10NG Datasheet (PDF)
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IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM)DS(on)ID 35 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)
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IPB26CN10N G IPD25CN10N GIPI26CN10N G IPP26CN10N G IPU25CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 25mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 35 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi
ipp26cn10n.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP26CN10NIIPP26CN10NFEATURESStatic drain-source on-resistance:RDS(on) 26mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI
ipb260n06n3-g ipp260n06n3-g.pdf

Type IPB260N06N3 G IPP260N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 26mDS(on),max Optimized technology for DC/DC convertersI 27 AD Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualifie
Otros transistores... IPP147N12N3G , IPP16CN10LG , IPP16CN10NG , IPP180N10N3G , IPP200N15N3G , IPP200N25N3G , IPP230N06L3G , IPP260N06N3G , IRF630 , IPP320N20N3G , IPP35CN10NG , IPP50CN10NG , IPP50R140CP , IPP50R199CP , IPP50R250CP , IPP50R299CP , IPP50R350CP .
History: 2SK3819 | SFU9214 | INK0103AC1 | NCE2301D | SIS439DNT | VS3610AI | FTD02N70
History: 2SK3819 | SFU9214 | INK0103AC1 | NCE2301D | SIS439DNT | VS3610AI | FTD02N70



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