IPP26CN10NG MOSFET Datasheet: N-Ch, 100V, 35A. Full specification with pinout and replacement list

IPP26CN10NG Specs and Replacement

   Type Designator: IPP26CN10NG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 232 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO220

IPP26CN10NG substitution

- MOSFET ⓘ Cross-Reference Search

IPP26CN10NG datasheet

..1. Size:1032K infineon
ipb26cn10ng ipd25cn10ng ipi26cn10ng ipp26cn10ng.pdf pdf_icon

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 25 mW Excellent gate charge x R product (FOM) DS(on) ID 35 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) ... See More ⇒

4.1. Size:707K infineon
ipb26cn10n-g ipd25cn10n-g ipi26cn10n-g ipp26cn10n-g ipu25cn10n-g.pdf pdf_icon

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 25 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 35 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi... See More ⇒

4.2. Size:246K inchange semiconductor
ipp26cn10n.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP26CN10N IIPP26CN10N FEATURES Static drain-source on-resistance RDS(on) 26m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXI... See More ⇒

9.1. Size:296K infineon
ipb260n06n3-g ipp260n06n3-g.pdf pdf_icon

Type IPB260N06N3 G IPP260N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 26 m DS(on),max Optimized technology for DC/DC converters I 27 A D Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualifie... See More ⇒

Detailed specifications: IPP147N12N3G , IPP16CN10LG , IPP16CN10NG , IPP180N10N3G , IPP200N15N3G , IPP200N25N3G , IPP230N06L3G , IPP260N06N3G , IRF640N , IPP320N20N3G , IPP35CN10NG , IPP50CN10NG , IPP50R140CP , IPP50R199CP , IPP50R250CP , IPP50R299CP , IPP50R350CP .