IPP320N20N3G Todos los transistores

 

IPP320N20N3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP320N20N3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

IPP320N20N3G Datasheet (PDF)

 ..1. Size:419K  infineon
 ipb320n20n3g ipp320n20n3g ipi320n20n3g ipp320n20n3g ipb320n20n3g ipi320n20n3g .pdf pdf_icon

IPP320N20N3G

IPB320N20N3 G IPP320N20N3 GIPI320N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 200 VDS N-channel, normal levelR 32mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 34 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica

 ..2. Size:731K  infineon
 ipp320n20n3g ipb320n20n3g ipi320n20n3g.pdf pdf_icon

IPP320N20N3G

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 3.1. Size:245K  inchange semiconductor
 ipp320n20n3.pdf pdf_icon

IPP320N20N3G

isc N-Channel MOSFET Transistor IPP320N20N3IIPP320N20N3FEATURESStatic drain-source on-resistance:RDS(on) 32mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

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History: RU82100R | APT30M30B2LL | BSS138DW | SIS430DN | 1N60P | IRHMK57260SE | WMQ080N03LG2

 

 
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