IPP320N20N3G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP320N20N3G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 136 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 34 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 135 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: TO220

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IPP320N20N3G datasheet

 ..1. Size:419K  infineon
 ipb320n20n3g ipp320n20n3g ipi320n20n3g ipp320n20n3g ipb320n20n3g ipi320n20n3g .pdf pdf_icon

IPP320N20N3G

IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 200 V DS N-channel, normal level R 32 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 34 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica

 ..2. Size:731K  infineon
 ipp320n20n3g ipb320n20n3g ipi320n20n3g.pdf pdf_icon

IPP320N20N3G

$ " " $$ " " $ " " TM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 200 V DS Q ' 381>>5?B=1

 3.1. Size:245K  inchange semiconductor
 ipp320n20n3.pdf pdf_icon

IPP320N20N3G

isc N-Channel MOSFET Transistor IPP320N20N3 IIPP320N20N3 FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T

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