IPP320N20N3G Specs and Replacement
Type Designator: IPP320N20N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO220
IPP320N20N3G substitution
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IPP320N20N3G datasheet
ipb320n20n3g ipp320n20n3g ipi320n20n3g ipp320n20n3g ipb320n20n3g ipi320n20n3g .pdf
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 200 V DS N-channel, normal level R 32 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 34 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica... See More ⇒
ipp320n20n3g ipb320n20n3g ipi320n20n3g.pdf
$ " " $$ " " $ " " TM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 200 V DS Q ' 381>>5?B=1... See More ⇒
ipp320n20n3.pdf
isc N-Channel MOSFET Transistor IPP320N20N3 IIPP320N20N3 FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
Detailed specifications: IPP16CN10LG, IPP16CN10NG, IPP180N10N3G, IPP200N15N3G, IPP200N25N3G, IPP230N06L3G, IPP260N06N3G, IPP26CN10NG, IRFP260N, IPP35CN10NG, IPP50CN10NG, IPP50R140CP, IPP50R199CP, IPP50R250CP, IPP50R299CP, IPP50R350CP, IPP50R380CE
Keywords - IPP320N20N3G MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: NTMFS015N10MCL | HFS12N60U
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