All MOSFET. IPP320N20N3G Datasheet

 

IPP320N20N3G Datasheet and Replacement


   Type Designator: IPP320N20N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO220
 

 IPP320N20N3G substitution

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IPP320N20N3G Datasheet (PDF)

 ..1. Size:419K  infineon
ipb320n20n3g ipp320n20n3g ipi320n20n3g ipp320n20n3g ipb320n20n3g ipi320n20n3g .pdf pdf_icon

IPP320N20N3G

IPB320N20N3 G IPP320N20N3 GIPI320N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 200 VDS N-channel, normal levelR 32mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 34 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica

 ..2. Size:731K  infineon
ipp320n20n3g ipb320n20n3g ipi320n20n3g.pdf pdf_icon

IPP320N20N3G

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 3.1. Size:245K  inchange semiconductor
ipp320n20n3.pdf pdf_icon

IPP320N20N3G

isc N-Channel MOSFET Transistor IPP320N20N3IIPP320N20N3FEATURESStatic drain-source on-resistance:RDS(on) 32mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

Datasheet: IPP16CN10LG , IPP16CN10NG , IPP180N10N3G , IPP200N15N3G , IPP200N25N3G , IPP230N06L3G , IPP260N06N3G , IPP26CN10NG , 10N60 , IPP35CN10NG , IPP50CN10NG , IPP50R140CP , IPP50R199CP , IPP50R250CP , IPP50R299CP , IPP50R350CP , IPP50R380CE .

History: STL65DN3LLH5 | MS60P02NE

Keywords - IPP320N20N3G MOSFET datasheet

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 IPP320N20N3G replacement

 

 
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