All MOSFET. IPP320N20N3G Datasheet

 

IPP320N20N3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP320N20N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO220

 IPP320N20N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP320N20N3G Datasheet (PDF)

 ..1. Size:419K  infineon
 ipb320n20n3g ipp320n20n3g ipi320n20n3g ipp320n20n3g ipb320n20n3g ipi320n20n3g .pdf

IPP320N20N3G IPP320N20N3G

IPB320N20N3 G IPP320N20N3 GIPI320N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 200 VDS N-channel, normal levelR 32mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 34 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica

 ..2. Size:731K  infineon
 ipp320n20n3g ipb320n20n3g ipi320n20n3g.pdf

IPP320N20N3G IPP320N20N3G

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 3.1. Size:245K  inchange semiconductor
 ipp320n20n3.pdf

IPP320N20N3G IPP320N20N3G

isc N-Channel MOSFET Transistor IPP320N20N3IIPP320N20N3FEATURESStatic drain-source on-resistance:RDS(on) 32mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AOK18N65

 

 
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