IPP50R199CP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP50R199CP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 139 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 80 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.199 Ohm
Encapsulados: TO220
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IPP50R199CP datasheet
ipp50r199cp.pdf
isc N-Channel MOSFET Transistor IPP50R199CP IIPP50R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a
ipa50r190ce ipp50r190ce ipw50r190ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R190CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPW50R190CE, IPP50R190CE, IPA50R190CE TO-247 TO-220 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the s
ipw50r190ce ipp50r190ce.pdf
IPW50R190CE, IPP50R190CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co
Otros transistores... IPP200N25N3G, IPP230N06L3G, IPP260N06N3G, IPP26CN10NG, IPP320N20N3G, IPP35CN10NG, IPP50CN10NG, IPP50R140CP, 10N60, IPP50R250CP, IPP50R299CP, IPP50R350CP, IPP50R380CE, IPP50R399CP, IPP50R520CP, IPP530N15N3G, IPP600N25N3G
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