Справочник MOSFET. IPP50R199CP

 

IPP50R199CP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP50R199CP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 139 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.199 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IPP50R199CP

 

 

IPP50R199CP Datasheet (PDF)

 ..1. Size:550K  infineon
 ipp50r199cp.pdf

IPP50R199CP IPP50R199CP

IPP50R199CPCIMOSTM #:A0

 ..2. Size:245K  inchange semiconductor
 ipp50r199cp.pdf

IPP50R199CP IPP50R199CP

isc N-Channel MOSFET Transistor IPP50R199CPIIPP50R199CPFEATURESStatic drain-source on-resistance:RDS(on) 0.199Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 6.1. Size:2210K  infineon
 ipa50r190ce ipp50r190ce ipw50r190ce.pdf

IPP50R199CP IPP50R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R190CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPW50R190CE, IPP50R190CE, IPA50R190CETO-247 TO-220 TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the s

 6.2. Size:1874K  infineon
 ipw50r190ce ipp50r190ce.pdf

IPP50R199CP IPP50R199CP

IPW50R190CE, IPP50R190CEMOSFETPG-TO 247 PG-TO 220500V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovationwhile representing a co

 6.3. Size:245K  inchange semiconductor
 ipp50r190ce.pdf

IPP50R199CP IPP50R199CP

isc N-Channel MOSFET Transistor IPP50R190CEIIPP50R190CEFEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

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